Full PDF Text Transcription for 2SK4081I (Reference)
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2SK4081I. For precise diagrams, and layout, please refer to the original PDF.
isc N-Channel MOSFET Transistor 2SK4081I FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =...
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ltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.0 A IDM Drain Current-Single Pluse 8.0 A PD Total Dissipation @TC=25℃ 30 W TJ Max.
2SK4081I Datasheet
