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isc N-Channel MOSFET Transistor
2SK4089LS
FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.72Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
12
A
IDM
Drain Current-Single Pluse
48
A
PD
Total Dissipation @TC=25℃
40
W
TJ
Max.