Datasheet Summary
isc N-Channel MOSFET Transistor
Features
- Drain Current : ID= 3.0A@ TC=25℃
- Drain Source Voltage
: VDSS= 650V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 3.9Ω(Max) @ VGS= 10V
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRIPTION
- motor drive, DC-DC converter, power switch and solenoid...
