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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Fast Switching Speed
isc Product Specification
2SK603
DESCRIPTION ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature Tstg Storage Temperature
VALUE UNIT
800 ±20
V V
3A
80 150 -55~150
W ℃ ℃
isc website:www.iscsemi.cn
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