Datasheet Details
| Part number | 2SK791 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 60.94 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
 2SK791 Datasheet
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| Part number | 2SK791 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 60.94 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
2SK791 Datasheet
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·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=850V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 850 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 3 A Total Dissipation@TC=25℃ 100 W Max.
Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 1.0 Thermal Resistance,Junction to Ambient 62.5 ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2SK791 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SK791 | Transistor | Toshiba Semiconductor |
 |
2SK791 | Power MOSFET | VBsemi |
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|---|---|
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