Datasheet Details
| Part number | 2SK805 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.11 KB |
| Description | N-Channel MOSFET Transistor |
| Download | 2SK805 Download (PDF) |
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| Part number | 2SK805 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.11 KB |
| Description | N-Channel MOSFET Transistor |
| Download | 2SK805 Download (PDF) |
|
|
|
·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 20 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W 2SK805 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
isc N-Channel MOSFET Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SK805 | Silicon N-Channel Power F-MOS FET | Matsushita Electric |
| Part Number | Description |
|---|---|
| 2SK803 | N-Channel MOSFET Transistor |
| 2SK804 | N-Channel MOSFET Transistor |
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| 2SK807 | N-Channel MOSFET Transistor |
| 2SK808 | N-Channel MOSFET Transistor |
| 2SK809 | N-Channel MOSFET Transistor |
| 2SK809A | N-Channel MOSFET Transistor |
| 2SK810 | N-Channel MOSFET Transistor |
| 2SK811 | N-Channel MOSFET Transistor |
| 2SK817 | N-Channel MOSFET Transistor |