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2SK844 Datasheet N-Channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

General Description

·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max.

Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK844 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;

ID= 10mA VGS(th) Gate Threshold Voltage VDS=0;

Overview

isc N-Channel MOSFET Transistor.