Datasheet Details
| Part number | 2SK850 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.45 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
 2SK850 Datasheet
|
|
|
| Part number | 2SK850 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.45 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
2SK850 Datasheet
|
|
|
|
·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 40 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
isc N-Channel MOSFET Transistor 2SK850.
| Part Number | Description |
|---|---|
| 2SK851 | N-Channel MOSFET Transistor |
| 2SK856 | N-Channel MOSFET Transistor |
| 2SK857 | N-Channel MOSFET Transistor |
| 2SK858 | N-Channel MOSFET Transistor |
| 2SK859 | N-Channel MOSFET Transistor |
| 2SK803 | N-Channel MOSFET Transistor |
| 2SK804 | N-Channel MOSFET Transistor |
| 2SK805 | N-Channel MOSFET Transistor |
| 2SK806 | N-Channel MOSFET Transistor |
| 2SK807 | N-Channel MOSFET Transistor |