Datasheet Details
| Part number | 2sc4159 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.59 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2sc4159 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4159.
| Part number | 2sc4159 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.59 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2sc4159 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V (Min) ·Large Current Capacity ·Complement to Type 2SA1606 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, AF power amplifier, 100W output predrivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4159 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
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|---|---|---|---|
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