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Inchange Semiconductor

30N12 Datasheet Preview

30N12 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
30N12
·FEATURES
·Drain Current ID= 30A@ TC=25
·Drain Source Voltage-
: VDSS= 120V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.075Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
120
±30
V
V
ID Drain Current-Continuous
30 A
IDM Drain Current-Single Plused
100 A
PD Total Dissipation @TC=25
120 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.83 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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Inchange Semiconductor

30N12 Datasheet Preview

30N12 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
30N12
·ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-voltage
VDS= VGS; ID=1mA
IS= 30A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VGS= 10V; ID= 15A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS=120V; VGS= 0
Ciss Input Capacitance
Crss Reverse Transfer capacitance
Coss Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
VGS=10V;
ID=15A;
VDD=75V;
RL=50Ω
MIN TYPE MAX UNIT
120 V
2.0 4.0 V
1.4 V
0.075 Ω
±100 nA
200 µA
3000
500 pF
1200
630
115
ns
375
450
·
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 30N12
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
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30N12 Datasheet PDF





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