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3AD53 Inchange Semiconductor Silicon PNP Power Transistor

Description ·DC Current Gain- : hFE=20-140@IC= -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC= -4A · APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -24 V VEBO Emitter-Base Voltage -20 V IC Collector Current-Continu...
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Datasheet PDF File 3AD53 Datasheet - 147.76KB

3AD53  






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