Datasheet Details
| Part number | 3DA76 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 249.00 KB |
| Description | Silicon NPN Power Transistor |
| Download | 3DA76 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 3DA76 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 249.00 KB |
| Description | Silicon NPN Power Transistor |
| Download | 3DA76 Download (PDF) |
|
|
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·High DC Current Gain- : hFE= 15(Max) @IC= 0.3A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current-Continuous 0.5 A PC Collector Power Dissipation@TC=75℃ 7.5 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -55-175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W 3DA76 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC= 50mA;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A;
IB=0.1A ICBO Emitter Cutoff current VCE= 24V;
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