Datasheet Details
| Part number | 3DA882 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 260.10 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 3DA882-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor 3DA882.
| Part number | 3DA882 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 260.10 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 3DA882-InchangeSemiconductor.pdf |
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·High Collector Current-IC= 3.0A ·Low Saturation Voltage - : VCE(sat)= 0.5V(Max)@ IC= 2.0A, IB= 0.2A ·Good Linearity of hFE ·Complement to Type 3CA772 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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3DA882 | NPN Transistor | JCET |
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|---|---|
| 3DA752 | Silicon NPN Power Transistor |
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