3DD101A - Silicon NPN Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) DC Current Gain- : hFE= 20(Min.)@IC= 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

Inchange Semiconductor

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Datasheet Details

Part number	3DD101A
Manufacturer	Inchange Semiconductor
File Size	191.00 KB
Description	Silicon NPN Power Transistor
Datasheet	3DD101A Datasheet
Additional preview pages of the 3DD101A datasheet.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier,DC-DC converter and regulated power supply applications.

Published: Jun 18, 2016 |