3DD102A - Silicon NPN Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) DC Current Gain- : hFE= 20(Min.)@IC= 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

Inchange Semiconductor

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Datasheet Details

Part number	3DD102A
Manufacturer	Inchange Semiconductor
File Size	209.11 KB
Description	Silicon NPN Power Transistor
Datasheet	3DD102A Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.

Published: Jun 18, 2016 |