3DD15A - Silicon NPN Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) DC Current Gain- : hFE= 30~250(Min.)@IC= 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A APPLICATIONS Designed for B&W TV horizontal output , regulated power supply and power amplifier applicatio

Inchange Semiconductor

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Datasheet Details

Part number	3DD15A
Manufacturer	Inchange Semiconductor
File Size	185.32 KB
Description	Silicon NPN Power Transistor
Datasheet	3DD15A Datasheet
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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD15A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications.

Published: Jun 26, 2016 |