3DD15B Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 3DD15B .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min. DC Current Gain- : hFE= 30~250(Min. Collector-Emitter Saturation Vo.

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Datasheet Specifications

Part number: 3DD15B
Manufacturer: Inchange Semiconductor
File Size: 206.22 KB
Datasheet: 3DD15B-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for B&W TV horizontal output , regulated power supply and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Curr

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3DD15B Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 3DD15B-like datasheet