3DD208 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 0.5A ·Collector-Emitter Saturation Voltage-.
- Part: 3DD208
- Manufacturer: Inchange Semiconductor (official site)
- Size: 202.44 KB
3DD208 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor .
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 0.5A ·Collector-Emitter Saturation Voltage-.