3DD325 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max) @IC= 0.5A APPLICATIONS ·Designed for B/W TV vertical output applications.
3DD325 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor .
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max) @IC= 0.5A APPLICATIONS ·Designed for B/W TV vertical output applications.