3DD325 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD325 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.

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Datasheet Specifications

Part number: 3DD325
Manufacturer: Inchange Semiconductor
File Size: 189.20 KB
Datasheet: 3DD325-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO Collector-Base Voltage 3DD325A Collector-Emitter Voltage 3DD325B Emitter-Base Voltage 50 30 50 4 V V V IC Collector Current-Continuous Collector Power Dissipati

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3DD325 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 3DD325-like datasheet