Datasheet4U Logo Datasheet4U.com

3DD5024 Silicon NPN Power Transistor

3DD5024 Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). Wide Area of Safe Operation. Built-in Damper Diode APPLICATIONS. Horizontal deflection.

3DD5024 Applications

* Horizontal deflection output for TV, CRT monitor applicaitions. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 8 A IB Base Current

📥 Download Datasheet

Preview of 3DD5024 PDF
datasheet Preview Page 2

Datasheet Details

Part number
3DD5024
Manufacturer
Inchange Semiconductor
File Size
151.93 KB
Datasheet
3DD5024-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • 3DD5024A - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO-MICROELECTRONICS)
  • 3DD5024P - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO)
  • 3DD5023 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 3DD5023P - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO)
  • 3DD5027 - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO-MICROELECTRONICS)
  • 3DD5027A - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO-MICROELECTRONICS)
  • 3DD5011 - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO-MICROELECTRONICS)
  • 3DD5011A9 - Silicon NPN Bipolar Transistor (Huajing Microelectronics)

📌 All Tags

Inchange Semiconductor 3DD5024-like datasheet