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Inchange Semiconductor

3DD5024 Datasheet Preview

3DD5024 Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·Wide Area of Safe Operation
·Built-in Damper Diode
APPLICATIONS
·Horizontal deflection output for TV, CRT monitor
applicaitions.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous 8 A
IB Base Current- Continuous
4A
ICP Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
16 A
35 W
150
Tstg Storage Temperature Range
-55~150
isc Product Specification
3DD5024
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

3DD5024 Datasheet Preview

3DD5024 Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD5024
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector- Base Breakdown Voltage
IC= 1mA ; IE= 0
1500
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 400mA; IC= 0
6
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.5A; IB= 0.9A
IEBO Emitter Cutoff Current
VEB= 4V; IC= 0
40
ICBO Collector Cutoff Current
VCB= 1500V; IE= 0
hFE DC Current Gain
IC= 1A; VCE= 5V
IC= 5A; VCE= 5V
10
5
VECF
C-E Diode Forward Voltage
IF= 5A
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 10V; f= 0.5MHz
1.7
Switching times; Resistive load
tstg Storage Time
tf Fall Time
IC= 4A, IB1= IB2= -1.8A
V
V
3.0 V
1.5 V
150 mA
1 mA
30
2.0 V
MHz
1.0 μs
9.0 μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 3DD5024
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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