3DD8E Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications.
3DD8E is Silicon NPN Power Transistor manufactured by Inchange Semiconductor .
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications.