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Inchange Semiconductor

3DG13007 Datasheet Preview

3DG13007 Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 2.0(Max) @ IC= 5.0A
·Switching Time
: tf= 0.9μs(Max.)@ IC= 5.0A
APPLICATIONS
·Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited for
115 and 220V switchmode applications such as switching
regulators,inverters,Motor controls,Solenoid/Relay drivers
and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
700 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
8A
ICM Collector Current-peak
16 A
IB Base Current
4A
IBM Base Current-Peak
8A
IE Emitter Current
12 A
IEM Emitter Current-Peak
PC
Collector Power Dissipation
TC=25
Ti Junction Temperature
Tstg Storage Temperature Range
24
80
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX UNIT
1.56 /W
62.5 /W
isc Product Specification
3DG13007
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

3DG13007 Datasheet Preview

3DG13007 Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DG13007
ELECTRICAL CHARACTERISTICS
TC =25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.4A
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 5A ;IB= 1A
TC= 100
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 8A ;IB= 2A
VBE(sat)-1 Base-Emitter Saturation Voltage
VBE(sat)-2 Base-Emitter Saturation Voltage
ICES Collector Cutoff Current
IEBO Emitter Cutoff Current
IC= 2A ;IB= 0.4A
IC= 5A ;IB= 1A
TC= 100
VCES= 700V; VBE(off)= 1.5V
TC= 125
VEB= 9V; IC= 0
hFE-1
DC Current Gain
IC= 2A; VCE= 5V
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
fT Current-Gain—Bandwidth Product IC= 0.5 A; VCE= 10V;
COB Output Capacitance
IE= 0; VCB= 10V; ftest = 0.1MHz
Switching Times; Resistive Load
td Storage Time
tr Fall Time
ts Storage Time
IC= 5A; VCC= 125V;
IB1= IB2= 1A; tp= 25μs;
Duty Cycle1%
tf Fall Time
MIN TYP. MAX UNIT
400 V
1.0 V
2.0
3.0
V
3.0 V
1.2 V
1.6
1.5
V
0.1
1.0
mA
0.1 mA
8 40
5 30
4 MHz
80 pF
0.1 μs
1.5 μs
3.0 μs
0.7 μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 3DG13007
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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