3N60 N-Channel MOSFET Transistor

Inchange Semiconductor

Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: 3N60
Manufacturer: Inchange Semiconductor
File Size: 213.40 KB
Datasheet: 3N60-InchangeSemiconductor.pdf
Description: N-Channel MOSFET Transistor

Features

* Drain Current ID=3.0A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max)
* Fast Switching
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching power supplies,converters,AC and DC motor controls
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 3 A IDM Drain Current-Single Plused 12 A PD

3N60 Distributors

📁 Related Datasheet

3N60-LC 3N60-TC2 3N60A 3N60A4 3N60K 3N60K-MK

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3N60 N-Channel MOSFET Transistor Inchange Semiconductor

Inchange Semiconductor 3N60-like datasheet