Datasheet Details
| Part number | 4N35 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 226.14 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 4N35-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 4N35 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 226.14 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 4N35-InchangeSemiconductor.pdf |
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·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 350 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A ID(puls) Pulse Drain Current 16 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W 4N35 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS;
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