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Inchange Semiconductor

4N50 Datasheet Preview

4N50 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
4N50
·FEATURES
·Drain Current ID= 4A@ TC=25
·Drain Source Voltage-
: VDSS= 500V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 2.0Ω(Max)
·Fast Switching
·APPLICATIONS
·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
500
±20
V
V
ID Drain Current-Continuous
4A
IDM Drain Current-Single Plused
12 A
PD Total Dissipation @TC=25
75 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.67 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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Inchange Semiconductor

4N50 Datasheet Preview

4N50 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
4N50
·ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer capacitance
Coss Output Capacitance
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
CONDITIONS
VGS= 0; ID=250µA
VDS= VGS; ID=250µA
IS= 4A ;VGS= 0
VGS= 10V; ID= 2A
VGS= ±30V;VDS= 0
VDS=500V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
VGS=10V;
ID=2.5A;
VDD=225V;
RL=15Ω
MIN TYPE MAX UNIT
500 V
2.0 4.0 V
1.3 V
2.0 Ω
±100 nA
250 µA
800
60 pF
200
30
30
ns
30
55
·
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 4N50
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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