Datasheet4U Logo Datasheet4U.com

60N05 - N-Channel MOSFET Transistor

Description

Drain Current ID= 60A@ TC=25℃ Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier High current,high speed switching

📥 Download Datasheet

Datasheet preview – 60N05

Datasheet Details

Part number 60N05
Manufacturer Inchange Semiconductor
File Size 236.00 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet 60N05 Datasheet
Additional preview pages of the 60N05 datasheet.

📁 Similar Datasheet

  • 60N05 - N-CHANNEL POWER MOSFET (UTC)
  • 60N05-16 - N-Channel MOSFET (INCHANGE)
  • 60N03 - Power MOSFET (Tuofeng Semiconductor)
  • 60N03 - N-Channel MOSFET (Anachip)
  • 60N03 - N-Channel MOSFET (Cmos)
  • 60N035 - N-Channel Field Effect Transistor (ETC)
  • 60N03GP - AP60N03GP (Advanced Power Electronics)
  • 60N03L-10 - N-CHANNEL Power MOSFET (STMicroelectronics)
  • 60N03S - AP60N03S (Advanced Power Electronics)
  • 60N06 - TO-220F N-Channel MOSFET Transistor (INCHANGE)
Other Datasheets by Inchange Semiconductor
  • 60N10 - N-Channel MOSFET Transistor

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 60N05 ·DESCRIPTION ·Drain Current ID= 60A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier High current,high speed switching Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 60 ID A Drain Current-continuous@ TC=100℃ 38．9 ID(puls) Pulse Drain Current 200 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.
Published: |