Datasheet Details
| Part number | 7N20 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 61.54 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 7N20-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 7N20.
| Part number | 7N20 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 61.54 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 7N20-InchangeSemiconductor.pdf |
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·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 200 ±20 7 V V A ID(puls) Pulse Drain Current 28 A Ptot Total Dissipation@TC=25℃ 70 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1.67 ℃/W 80 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 7N20 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage VGS= 0;
ID=1mA VDS= VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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7N20 | 7A 200V N-CHANNEL POWER MOSFET | UNISONIC TECHNOLOGIES |
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7N20Z | 7A 200V N-CHANNEL POWER MOSFET | UNISONIC TECHNOLOGIES |
| Part Number | Description |
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