Datasheet Details
| Part number | A1659 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 138.31 KB |
| Description | 2SA1659 |
| Datasheet |
 A1659 Datasheet
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| Part number | A1659 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 138.31 KB |
| Description | 2SA1659 |
| Datasheet |
A1659 Datasheet
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·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·Complement to Type 2SC4370 ·Full-mold package that does not require an insulating board or bushing when mounting.
APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) Base Current Collector Power Dissipation @TC=25℃ Junction Temperature -0.15 A PC 20 W ℃ TJ 150 Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn Free Datasheet http://www.0PDF.com INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1659 TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor.
| Part Number | Description |
|---|---|
| A1658 | 2SA1658 |