B1217 - 2SB1217

Inchange Semiconductor

General Description

High Collector Current -IC= -3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD1818 APPLICATIONS

motor .

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B1217 2sb1217 by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	B1217
Manufacturer	Inchange Semiconductor
File Size	100.97 KB
Description	2SB1217
Datasheet	B1217 Datasheet

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB1217 DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1818 APPLICATIONS ·Designed for use in DC-DC converter, driver, solenid and motor . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICP Collector Current-Pulse -5 A IBB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range -0.5 10 1.