BD330 transistor equivalent, silicon pnp power transistor.
*Especially for battery equipped applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VC.
*DC Current Gain-
: hFE= 85~375(Min)@ IC= -0.5A
*Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= -20V(Min)
*Complement to type BD329
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS .
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