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BD544C Datasheet Silicon PNP Power Transistors

Manufacturer: Inchange Semiconductor

Download the BD544C datasheet PDF. This datasheet also includes the BD544 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BD544-InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

·70 W at 25°C Case Temperature ·Complement to Type BD543/A/B/C ·8 A Continuous Collector Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD544 -40 BD544A -60 VCBO Collector-Base Voltage V BD544B -80 BD544C -100 BD544 -40 VCEO Collector-Emitter Voltage BD544A -60 V BD544B -80 BD544C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -10 A 70 W 2 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.79 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BD544/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT BD544 -40 V(BR)CEO Collector-Emitter Breakdown Voltage BD544A BD544B IC= -30mA ;

Overview

isc Silicon PNP Power Transistors BD544/A/B/C.