BD550B
BD550B is Silicon NPN Power Transistors manufactured by Inchange Semiconductor.
DESCRIPTION
High Power Dissipation
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V(Min)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use as either driver or output unit applications in audio amplifier circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
UNIT
VCBO VCER VCEO
Collector-Base Voltage
Collector-Emitter Voltage RBE= 100Ω
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
℃
Tstg
Storage Temperature Range
-65~200 ℃
- isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER...
