BD550B - Silicon NPN Power Transistors

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	BD550B
Manufacturer	Inchange Semiconductor
File Size	182.55 KB
Description	Silicon NPN Power Transistors
Datasheet	BD550B Datasheet
Additional preview pages of the BD550B datasheet.

Product details

Description

High Power Dissipation Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as either driver or output unit applications in audio amplifier circuits.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO VCER VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage 275 V 275 V 250 V VEBO Emitter-Base Volt

📁 Similar Datasheet

BD550FHG - AC/DC Controller (ROHM)
BD550S - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (Pan Jit International)
BD550T - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (Pan Jit International)
BD550YS - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (Pan Jit International)
BD550YT - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (Pan Jit International)
BD555BKFV - AC/DC Controller IC (Rohm)
BD500 - PNP Transistor (INCHANGE)
BD5000 - PRESS-FIT DIODE (Won-Top Electronics)

Other Datasheets by Inchange Semiconductor

BD550 - Silicon NPN Power Transistors
BD544 - Silicon PNP Power Transistors
BD544A - Silicon PNP Power Transistors
BD544B - Silicon PNP Power Transistors
BD544C - Silicon PNP Power Transistors
BD546 - Silicon PNP Power Transistor

Published: Nov 29, 2016 |