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Inchange Semiconductor

BD550B Datasheet Preview

BD550B Datasheet

Silicon NPN Power Transistors

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isc Silicon NPN Power Transistors
DESCRIPTION
High Power Dissipation
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V(Min)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use as either driver or output unit applications
in audio amplifier circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
VCER
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
RBE= 100Ω
Collector-Emitter Voltage
275
V
275
V
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
2
A
150
W
200
Tstg
Storage Temperature Range
-65~200
BD550B
·
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

BD550B Datasheet Preview

BD550B Datasheet

Silicon NPN Power Transistors

No Preview Available !

isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A
VBE(on) Base-Emitter On Voltage
ICER
Collector Cutoff Current
IC= 2A ; VCE= 4V
VCE= 250V; RBE= 100Ω
ICEO
Collector Cutoff Current
VCE= 200V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 2A ; VCE= 4V
fT
Current Gain-Bandwidth Product
IC= 0.2A ; VCE= 10V
BD550B
MIN TYP. MAX UNIT
250
V
2
V
2
V
1
mA
5
mA
1
mA
10
50
5
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BD550B
Description Silicon NPN Power Transistors
Maker Inchange Semiconductor
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