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BD635 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·DC Current Gain - : hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Complement to Type BD636 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.3 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;

IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;

Overview

isc Silicon NPN Power Transistor BD635.