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BD635 - Silicon NPN Power Transistor

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Datasheet Details

Part number BD635
Manufacturer Inchange Semiconductor
File Size 188.67 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BD635-InchangeSemiconductor.pdf

BD635 Product details

Description

DC Current Gain - : hFE = 40(Min.)@ IC= 25mA Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) Complement to Type BD636 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and switching applications.

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