Datasheet Details
| Part number | BD637 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.23 KB |
| Description | Silicon NPN Power Transistor |
| Download | BD637 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor BD637.
| Part number | BD637 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.23 KB |
| Description | Silicon NPN Power Transistor |
| Download | BD637 Download (PDF) |
|
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·DC Current Gain - : hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) ·Complement to Type BD638 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.3 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
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| Part Number | Description |
|---|---|
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| BD635 | Silicon NPN Power Transistor |
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