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BD684 Datasheet - Inchange Semiconductor

Silicon PNP Power Transistor

BD684 General Description

*Collector *Emitter Breakdown Voltage * : V(BR)CEO = -120V *DC Current Gain * : hFE = 750(Min) @ IC= -1.5 A *Complement to Type BD683 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for audio and vide.

BD684 Datasheet (189.89 KB)

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Datasheet Details

Part number:

BD684

Manufacturer:

Inchange Semiconductor

File Size:

189.89 KB

Description:

Silicon pnp power transistor.

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BD684 Silicon PNP Power Transistor Inchange Semiconductor

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