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BD941 Datasheet

(BD933 - BD941) Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD933/935/937/939/941
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= 150mA
·Complement to Type BD934/936/938/940/942
APPLICATIONS
·Designed for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
BD933
45
BD935
60
VCBO
Collector-Base Voltage BD937
100
BD939
120
BD941
140
BD933
45
BD935
60
VCEO
Collector-Emitter Voltage BD937
80
BD939
100
BD941
120
VEBO
Emitter-Base Voltage
5
IC Collector Current-Continuous
3
ICM Collector Current-Peak
7
IBB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
0.5
30
150
Tstg Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
4.17 /W
Thermal Resistance,Junction to Ambient 70 /W
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/




Inchange Semiconductor

BD941 Datasheet Preview

BD941 Datasheet

(BD933 - BD941) Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD933/935/937/939/941
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD933
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD935
BD937 IC= 100mA ; IB= 0
BD939
BD941
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=B 0.1A
VBE(on) Base-Emitter On Voltage
ICBO Collector Cutoff Current
ICEO Collector Cutoff Current
IC= 1A; VCE= 2V
VCB= VCBOmax; IE= 0
VCB= VCBOmax; IE= 0,TJ=150
VCE= VCEOmax; IB= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 150mA ; VCE= 2V
hFE-2
DC Current Gain
IC= 1A ; VCE= 2V
fT Current-Gain—Bandwidth Product IC= 250mA ; VCE= 10V
Switching Times
ton Turn-On Time
toff Turn-Off Time
IC= 1.0A; IB1= -IB2= 0.1A
MIN TYP. MAX UNIT
45
60
80 V
100
120
0.6 V
1.3 V
0.05
1
mA
0.1 mA
0.2 mA
40 250
25
3 MHz
0.4 1.0 μs
1.5 3.0 μs
isc Websitewww.iscsemi.cn
2
Free Datasheet http://www.datasheet4u.com/


Part Number BD941
Description (BD933 - BD941) Silicon NPN Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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