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BD949F - Silicon NPN Power Transistor

Description

DC Current Gain- : hFE= 40(Min)@ IC= 500mA Complement to Type BD950F/952F/954F/956F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

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Datasheet Details

Part number BD949F
Manufacturer Inchange Semiconductor
File Size 213.70 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BD949F Datasheet
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isc Silicon NPN Power Transistor BD949F/951F/953F/955F DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 500mA ·Complement to Type BD950F/952F/954F/956F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD949F 60 BD951F 80 VCBO Collector-Base Voltage V BD953F 100 BD955F 120 BD949F 60 BD951F 80 VCEO Collector-Emitter Voltage V BD953F 100 BD955F 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 22 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERI
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