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BDS12 - Silicon NPN Power Transistor

The BDS12 by Inchange Semiconductor is a Silicon NPN Power Transistor. Below is the official datasheet preview.

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Official preview page of the BDS12 Silicon NPN Power Transistor datasheet (Inchange Semiconductor).

Datasheet Details

Part number BDS12
Manufacturer Inchange Semiconductor
File Size 210.78 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BDS12-InchangeSemiconductor.pdf
Additional preview pages of the BDS12 datasheet.

BDS12 Product details

Description

High Voltage: VCEV= 100V(Min) Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A High Reliablity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power linear and switching application and General puepose power.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEV Collector-Emitter Voltage 100 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage

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