BDT60 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Darlington Power Transistors BDT60/A/B/C .
DC Current Gain -hFE = 750(Min)@ IC= -1. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Mi.

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Datasheet Specifications

Part number: BDT60
Manufacturer: Inchange Semiconductor
File Size: 216.26 KB
Datasheet: BDT60-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT60 -60 VCBO Collector-Base Voltage BDT60A -80 V BDT60B -100 BDT60C -120 BDT60 -60 VCEO Collector

BDT60 Distributors

📁 Related Datasheet

BDT60A BDT60AF BDT60B BDT60BF BDT60C BDT60CF

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BDT60 Silicon PNP Power Transistor Inchange Semiconductor

Inchange Semiconductor BDT60-like datasheet