Download the BDT64A datasheet PDF.
This datasheet also covers the BDT64 variant, as both devices belong to the same silicon pnp darlington power transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
Collector Current -IC= -12A
High DC Current Gain-hFE= 1000(Min)@ IC= -5A
Complement to Type BDT65/A/B/C
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio output stages and general purpose
amplifier application
Full PDF Text Transcription for BDT64A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BDT64A. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C ·Minimu...
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t Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT64 -60 VCER Collector-Emitter Voltage BDT64A BDT64B -80 -100 BDT64C -120 BDT64 -60 VCEO Collector-Emitter Voltage BDT64A BDT64B -80 -100 BDT64C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -12 ICM Collector Current-Peak -20 IB Base Current-Continuous -0.
BDT64A Datasheet
