BDT85 Description
·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT81; MAX UNIT 1 ℃/W 70 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT81 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT83 BDT85 IC= 30mA;.