Download BDX53F Datasheet PDF
BDX53F page 2
Page 2

BDX53F Description

·Collector Current -IC= 8A ·High DC Current Gain- : hFE= 500(Min)@ IC= 2A ·plement to Type BDX54F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)...