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BDX62B - Silicon PNP Darlington Power Transistor

Download the BDX62B datasheet PDF. This datasheet also covers the BDX62 variant, as both devices belong to the same silicon pnp darlington power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Collector Current -IC= -8A High DC Current Gain-hFE= 1000(Min)@ IC= -3A Complement to Type BDX63/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applica

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Note: The manufacturer provides a single datasheet file (BDX62_InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number Description
BDX62 Silicon PNP Darlington Power Transistor
BDX62A Silicon PNP Darlington Power Transistor
BDX62C Silicon PNP Darlington Power Transistor
BDX63 Silicon NPN Darlington Power Transistor
BDX63A Silicon NPN Darlington Power Transistor

Full PDF Text Transcription

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type BDX63/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX62 -80 VCBO Collector-Base Voltage BDX62A -100 V BDX62B -120 BDX62C -140 BDX62 -60 VCEO Collector-Emitter Voltage BDX62A -80 V BDX62B -100 BDX62C -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
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