Datasheet Details
| Part number | BDY53 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.07 KB |
| Description | Silicon NPN Power Transistor |
| Download | BDY53 Download (PDF) |
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| Part number | BDY53 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.07 KB |
| Description | Silicon NPN Power Transistor |
| Download | BDY53 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)=60V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A IB Base Current 5 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ BDY53 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDY53 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BDY53 | (BDY53 / BDY54) NPN SILICON TRANSISTORS | Comset Semiconductors |
| Part Number | Description |
|---|---|
| BDY54 | Silicon NPN Power Transistor |
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| BDY13-6 | Silicon NPN Power Transistor |
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| BDY23 | Silicon NPN Power Transistor |
| BDY24 | Silicon NPN Power Transistor |
| BDY25B | Silicon NPN Power Transistor |
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