Datasheet Details
| Part number | BU104 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.87 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU104 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor BU104.
| Part number | BU104 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.87 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU104 Download (PDF) |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflexion output stage of B/W TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 150 V VCEX Collector-Emitter Voltage VBE= -5V 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Repetitive 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 3 A 85 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BU104D | NPN Transistor | INCHANGE |
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