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BU104 Datasheet - Inchange Semiconductor

Silicon NPN Power Transistor

BU104 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) *Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@ IC= 7A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use in horizontal deflexion output stage of B.

BU104 Datasheet (207.87 KB)

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Datasheet Details

Part number:

BU104

Manufacturer:

Inchange Semiconductor

File Size:

207.87 KB

Description:

Silicon npn power transistor.

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BU104 Silicon NPN Power Transistor Inchange Semiconductor

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