Datasheet Details
| Part number | BU105 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.46 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU105 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor BU105.
| Part number | BU105 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.46 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU105 Download (PDF) |
|
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·High Voltage-VCER= 1300V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in line operated B&W(19 and 20 inch 110℃ deflection circuits ) or color ( 11 and 14 inch 90℃ deflection circuits TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCER Collector-Emitter Voltage RBE= 100Ω 1300 V VCEO Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC= 90℃ TJ Junction Temperature 2.5 A 10 W 115 ℃ Tstg Storage Temperature -65~115 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU105 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
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