Datasheet Details
| Part number | BU111 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.30 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU111 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BU111 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.30 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU111 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltag- : VCEO(SUS)= 300V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV receivers chopper supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Repetitive 8 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU111 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A;
IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A;
| Part Number | Description |
|---|---|
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