Datasheet Details
| Part number | BU112 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.24 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU112 Download (PDF) |
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Overview: isc Silicon NPN Power Transistors BU112.
| Part number | BU112 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.24 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU112 Download (PDF) |
|
|
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·Collector-Emitter Voltage- :VCEX(SUS) = 550V(Min.) ·Collector Current- IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for deflection circuits applications in color TV receivers fitted with 90℃ kinescope.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 550 V VCEX Collector-Emitter Voltage VBE= -5V 550 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.9 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Collector-Base Breakdown Voltage IE= 30mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;
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