Datasheet Details
| Part number | BU113 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.46 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU113 Download (PDF) |
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Overview: isc Silicon NPN Power Transistors BU113.
| Part number | BU113 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.46 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU113 Download (PDF) |
|
|
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·Collector-Emitter Voltage- :VCEX(SUS) = 700V(Min.) ·Collector Current- IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output state of color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 700 V VCEX Collector-Emitter Voltage VBE= -5V 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC= 90℃ Tj Junction Temperature 4 A 30 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Collector-Base Breakdown Voltage IE= 30mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;
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