Datasheet Details
| Part number | BU134 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.99 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU134 Download (PDF) |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | BU134 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.99 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU134 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min.) ·Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV receiver’s chopper supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 1 A 85 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.0 ℃/W BU134 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
| Part Number | Description |
|---|---|
| BU100 | Silicon NPN Power Transistors |
| BU103A | Silicon NPN Power Transistor |
| BU104 | Silicon NPN Power Transistor |
| BU105 | Silicon NPN Power Transistor |
| BU111 | Silicon NPN Power Transistor |
| BU112 | Silicon NPN Power Transistor |
| BU113 | Silicon NPN Power Transistor |
| BU118 | Silicon NPN Power Transistor |
| BU120 | Silicon NPN Power Transistor |
| BU180 | Silicon NPN Darlington Power Transistor |